Abstract
ZnO doped Al (ZnO:Al ) thin film was deposited on corning glass substrate using DC magnetron sputtering method. Depositon process of the ZnO:Al thin films was kept constant at Argon pressure, deposition temperature and deposition time are 500 mTorr, 400°C and 2 hours, respectivelly. Furthermore, for deposition process has been done on the variation of power plasma are 33, 43, and 50 watt. For the optical properties of the ZnO:Al thin films using Photoluminescence spectroscopy. Different plasma power will affecting on ion energy and momentum pounder. It’s effect on the quality of thin films that influence to photoluminescence intensity was obtained.
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