Abstract

AbstractWe present a photoluminescence study of erbium implanted into porous silicon (Er:PSi) with two different Si porosities, a) Er:PSi with a purple appearance and b) with a green-yellow appearance. Er was implanted with a dose of 1×1015 Er/cm2 at 380 keV and annealed at 650°C for 30 minutes. Room-temperature 1.54μm Er3+ emission was observed from both samples. The emission from purple Er:PSi was four times stronger than that from green-yellow Er:PSi. In contrast, visible luminescence from green-yellow Er:PSi was found to be stronger than that from purple Er:PSi. Temperature quenching and power dependence was investigated to elucidate the excitation mechanisms of Er3+ in porous silicon. The results support a correlation between nanostructures of porous Si and 1.54 μm Er3+ luminescence.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.