Abstract
In this paper, the optical properties of a Si dopedIn0.53Ga0.47As/In0.52Ga0.24Al0.24As superlattice (SL) are investigated by using the photoluminescence (PL) technique in thetemperature range of 9–300 K. The origins of the optical transitions observed in the spectraare attributed through the analysis of the transition behaviour with temperature andexcitation power. The linewidths obtained at 9 and 300 K are smaller than those previouslyreported in the literature, and the blueshift observed with increasing temperature has asmall magnitude, indicating the excellent quality of the sample. The experimentalresults are compared with theoretical calculations based on the envelope functionformalism, with an excellent accordance. The excitonic emission was obtained in therange of 9–300 K, and the applicability of the Varshni, Viña, and Pässler (p-type andρ-type) models, usually used to describe the variation of the excitonic energy transition as afunction of temperature in semiconductor materials, was also analysed.
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