Abstract
The photoluminescence (PL) property of crystalline silicon quantum dots (Si QDs) in silicon nitride grown by using ammonia and silane gases is reported. The peak position of PL could be controlled in the wavelength range from 450 to 700 nm by adjusting the flow rates of ammonia and silane gases. The PL intensity of Si QDs grown by ammonia was more intense compared to that of Si QDs grown by nitrogen gas. To investigate the role of hydrogen in the PL enhancement, the Si QDs grown by nitrogen gas were postannealed under hydrogen ambient. The enhancement in PL intensity was attributed to the hydrogen passivation of dangling bonds related to silicon and/or nitrogen at the interface of Si QDs and silicon nitride.
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