Abstract
The processes of the synthesis of silicon-doped microcrystalline diamond films on AlN and Si substrates in microwave plasma in “methane-hydrogen-silane” mixtures were studied. It is shown that the dependence of the photoluminescence (PL) line intensity of silicon-vacancy centers in diamond (λ = 738 nm) on the silane concentration in a gas mixture passes through a maximum at SiH4/CH4 concentrations of 0.1% for Si substrates and 0.6% SiH4/CH4 for aluminum nitride substrates. It was found that such nonmonotonic variation of the PL intensity with increasing silane concentration occurs despite the unchanged growth rate of the diamond film, its structure, and phase composition in the studied silane concentration SiH4/CH4 range of 0–0.9%.
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