Abstract
Nanostructured-Si films with inert (Ar) and reactive (O2) atmosphere have been synthesized using laser ablation technique. The size distribution of Si nanoparticles found to depend on background gas pressure, observed by shift in photoluminescence components of energy. As deposited samples are mainly constituted by amorphous or highly defective nanoparticles. The annealing was performed at 400 °C and 1000 °C which induced growth of less defective Si-nanocrystals. The increment in PL intensity is evidence of coalescence. The results are interpreted in terms of size distribution (in the range of 2–5 nm), crystallinity and surface oxidation of the Si nanostructures.
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