Abstract
The infrared photoluminescence spectroscopy was performed for Sb-doped Hg1-xCdxTe(x≈0.38)from 3.9K to 115K. The band to band transition,localized exciton and donor acceptor pair(D0A0)related luminescence peaks were observed. The acceptor level which is related to Sb-doping and about 30 meV above the valence band was observed in photoluminescence experiment in Hg1-xCdxTe(x≈0.38).
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