Abstract
Photoluminescence spectra and nature of light-emitting centers of a porous silicon (por-Si) samples are given. The por- Si samples had high-ordered mosaic structure, which was received under long anodic etching p-Si(100) in electrolyte with an internal current source. The photoluminescence spectra were monitored at room temperature before and after annealing in air and vacuum. Comparative analysis of photoluminescence spectra of the por-Si samples annealed at different temperatures in air and vacuum shows that the thermal annealing conditions has significant effect on the intensity and spectral content of the photoluminescence spectra. The nature of the luminescence emission centers at different temperatures and annealing conditions was discussed.
Highlights
Today, a large number of works dedicated to the study of photoluminescence (PL) properties of porous silicon (por-Si), promising for practical applications, such as LEDs
Comparative analysis of photoluminescence spectra of the por-Si samples annealed at different temperatures in air and vacuum shows that the thermal annealing conditions has significant effect on the intensity and spectral content of the photoluminescence spectra
There is a model of the PL related to the presence of defect centers in oxides (SiOy) at the interface of silicon nanocrystallites (Si-NCs) por-Si/SiOy
Summary
A large number of works dedicated to the study of photoluminescence (PL) properties of por-Si, promising for practical applications, such as LEDs.
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