Abstract
Excitation spectroscopy of the luminescence, selective excitation photoluminescence, time-resolved photoluminescence and time-decay measurements of the photoluminescence have been carried out on various porous silicon samples. A very rich phenomenology of the luminescence has been measured. Strong evidence has been found for emission processes due to a strongly disordered system both topologically and energetically. No definitive responses about the origin of the luminescence in p-Si are found but some promising points for further investigations are underlined.
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