Abstract
Erbium-doped low symmetry Y2SiO5 crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping density. In the present work, we deposit Er3+-ions by the focused ion beam technique at yttrium sites with several fluences in one sample. With a photoluminescence study of these locally doped Er3+:Y2SiO5 crystals, we are able to evaluate the efficiency of the implantation process and develop it for the highest efficiency possible. We observe the dependence of ion activation after the post-implantation annealing on the fluence value. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
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