Abstract
Detailed photoluminescence and photoluminescence excitation (PLE) studying in temperature range 10-300 K with variation of detection energy of self-organized InAs/InGaAs/GaAs quantum dots is presented for the first time. Abnormal quantum well-like behavior of quantum dot arrays in PLE experiment at raised temperatures is observed. Changing in properties of quantum dots with temperature is attributed to modification of the type of the mechanism of dot population by charge carriers from non-equilibrium one to equilibrium one. Activation of thermally assisted carrier transport between quantum dots is found to destroy dot selection mechanism by detection energy in PLE experiment.
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