Abstract
Temperature-dependent photoluminescence properties of n-type GaSb/AlSb superlattices are reported. The measurements at temperatures ranging from room temperature to 4 K and with various excitation powers show that for our samples, radiative recombination dominates the recombination process at low temperatures, and very strong exciton–phonon coupling is found from the linewidth analysis. The best fit of the integrated photoluminescence intensity as a function of temperature shows that the quench of the photoluminescence at high temperature is due to the thermal activation of nonequilibrium electrons from the Γ1toL1subband.
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