Abstract
AbstractElectric‐field effects on the doubly excited resonant structures in He ground state photoionization are investigated theoretically using the complex‐rotation method with a B‐spline‐based configuration interaction (BSCI) basis. The variations of the structure profiles for the ML = 0 components of He (2,2a), (2,3 a), and (2,4a) 1P° and 1De resonance pairs for selected DC electric field strengths are examined. The changes of the resonant energies, widths, Fano q‐parameters, and back ground cross sections, are also presented.
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