Abstract
A detailed analysis of the photoionization of the DX(Te) centers in ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As (0.25x0.55) has provided experimental evidence for the negative-U character of the defect. A variety of phenomenological models were considered but only the assumption that in ground state the DX center binds two electrons and forms a negative-U system allowed us to quantitatively describe the observed ionization kinetics at different temperatures and light intensities. The intermediate state of the process is not the effective-mass X- or \ensuremath{\Gamma}-like excited state of the DX center, but rather the neutral (DX${)}^{0}$ state. This is strongly coupled to the lattice in the same way as the ground (DX${)}^{\mathrm{\ensuremath{-}}}$ state.
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