Abstract
The mechanism of ultraviolet laser ablation of GaN epitaxial films is determined: it is found to be based on the dissociation of GaN molecules to form volatile nitrogen-containing components. The conditions of exposure under which the formation of gallium nanoclusters on the GaN surface are determined. Regimes of epitaxial growth of GaN are found in which parallel microterraces form on the surface of the samples. It is found that when samples with microterraces in the as-grown state are irradiated by high-power ultraviolet radiation, gallium nanowires are formed on the surface. It is proposed to use these phenomena to develop new UV optical lithographic techniques and to fabricate single-electron devices based on GaN.
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