Abstract
A new photocurrent gain mechanism in multiquantum well structures has been observed. Unlike conventional photoconductors, the gain in these devices is caused not by a modulation of the conductivity, but by a modulation of the electric field. The physical basis of this phenomenon is the partial screening of the electric field in the wells due to the pile-up of photocarriers. At constant bias voltage this leads to an enhancement of the field in the barrier layers. In structures with injecting contacts this mechanism enhances electron injection and therefore gives rise to photocurrent gain.
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