Abstract
Photoinduced absorption and lateral photoconductivity of Ge/Si quantum dots with different doping levels are studied under interband optical excitation. The obtained spectra of absorption and photoconductivity are in good agreement. Observed photoconductivity is attributed to hole escape from ground and excited states while interlevel transitions do not impact the photoconductivity signal. Temperature dependence of photoinduced photoconductivity was measured. The decrease of photoresponse with the temperature increase is attributed to the hole recapture into the quantum dots.
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