Abstract
Thin layers of discotic liquid crystals, p-type: HBC-C8,2, HBC-C12 and n-type: HATNA 4D, RDISC1 and perylene derivative were prepared by drop- and zone-casting. It is shown, that zone-casting yields aligned, anisotropic films with edge-on orientation suitable for FET construction. In the isotropic, obtained by drop-casting films the charge-carrier photogeneration, recombination and transport were investigated by means of xerographic discharge. For the first time it is demonstrated experimentally that in the nominally n-type discotics the majority charge carriers are electrons.
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