Abstract
A variety of photoelectron spectra for gas phase F 3SiC 2H 4Si(CH 3) 3 molecule have been measured using monochromatized undulator radiation and a hemispherical electrostatic analyzer. Valence photoelectron spectrum shows many peaks for ionization from shallow and deep molecular orbitals in the binding energy region of 9–40 eV. A calculation of ionization energies using the outer valence Green's function method indicates energies in agreement with experimental results below 17.5 eV. Spectra for Si L-shell electron emission show chemical shifts of Si atoms induced from different chemical environments around two Si atoms and also exhibit spin–orbit splitting for 2p photoelectrons. Further photoelectron spectra for C K-shell and F K-shell are discussed in comparison with those of related molecules.
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