Photoelectron diffraction study of the surfaces of Si(111)√3×√3–Al and –In with Mo Mζ and Cr Lα lines

Abstract

Abstract Laboratory X-ray sources of Mo M ζ and Cr L α lines were used for a photoelectron diffraction (PED) study of the well-documented surfaces of Si(111)√3×√3–Al and Si(111)√3×√3–In. Azimuthal angle PED patterns of Al 2p and In 3d core levels were measured and analyzed by a multiple scattering formalism. The determined geometric parameters showed good agreement with those already established. This indicates the good potential of a PED study with laboratory sources.