Abstract
We employ a thin Al2O3 interlayer between p-NiOX catalyst/n-Si photoanode interfaces to realize an effective oxygen evolution reaction (OER). The Al2O3 interlayer is used to reduce the interface defect density, enhance the band bending by suppressing the Fermi-level pinning effect, and enhance photovoltage at the catalyst/semiconductor rectifying junction. Our NiOX/Al2O3/n-Si photoanodes generated a photocurrent of 3.36mA/cm2 at the equilibrium potential of OER (EOER=1.23V vs. reversible hydrogen electrode in 1M NaOH solution) and a solar-to-oxygen conversion efficiency of 0.321%. Moreover, the photoanode showed no sign of decay over 20h of photoelectrochemical water oxidation.
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