Abstract
Photoelectrical properties of fullerene (C60) doped spin coated thin films of Poly (3-hexylthiophene 2,5 diyl) (P3HT) and its blend with Phenyl-C61Butyric-Acid-Methyl-Ester (PCBM) were studied. Photoresponse characteristics were studied by noting the resistance variation with exposure to illumination, as a function of time. Decrease of resistance to the exposure of light was observed in both P3HT and its blend films indicating their high sensitivity to light. On/off ratio of resistance was 150 for P3HT devices and relative current change (photoresponse), ΔIrep= Ilight/Idark was a high value of 166 in P3HT devices. P3HT devices showed a periodic and stable response characteristics compared to the P3HT blend devices for several sensing cycles of photoelectrical studies.
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