Abstract
A memory effect is observed when a nickel-zinc selenide–germanium structure is irradiated by light of different spectral composition. The effect is based on the recharging of trapping sites in a ZnSe layer both, by electrons and holes. The long-wave boundary, for the first process, is determined by the energy barrier Ni Fermi level-ZnSe conduction band bottom. For the second process it is the barrier Ni Fermi level–ZnSe valence band top. Their values, found by the procedure proposed earlier, are 1.07 and 1.27 eV, respectively. [Russian Text Ignored].
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