Abstract
In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as starting material. The morphological properties of the deposited films has been analysed by means of electron microscopy, in scanning and transmission mode. Detectors with different layouts have been prepared and current–voltage characteristics have been recorded in the dark and under irradiation with light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed.
Highlights
Fast photoconductive detectors (PCD) are widely used for the characterization of sub-nanosecond pulses generated from infrared (IR) to ultraviolet (UV) light, X-ray and gamma-ray photons, as well as charged particles [1,2,3]
In our previous work we have already shown the potential of a spray deposition technique for depositing carbon nanotubes (CNTs) on silicon, starting from a powder, at low temperatures, without catalyst and an intermediate layer [7]. By using this spray technique, CNT films on silicon-based photodetectors were prepared, achieving quantum efficiency (QE) values in the visible light range comparable with those obtained for similar detectors with CNTs deposited by chemical vapour deposition (CVD) [7,13,14,15]
TEM images acquired at 120 kV of the spray dispersions obtained with both the atomizer (Figure 2a) and the airbrush (Figure 2b), show a more uniform distribution of the layer deposited with the atomizer uniform than that of the layer deposited with the airbrush
Summary
Fast photoconductive detectors (PCD) are widely used for the characterization of sub-nanosecond pulses generated from infrared (IR) to ultraviolet (UV) light, X-ray and gamma-ray photons, as well as charged particles [1,2,3]. By using this spray technique, CNT films on silicon-based photodetectors were prepared, achieving quantum efficiency (QE) values in the visible light range comparable with those obtained for similar detectors with CNTs deposited by CVD [7,13,14,15].
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