Abstract
The photoconductive properties of layers deposited by organo metallic chemical vapour deposition (OMCVD) on GaAs substrates have been investigated through the characterization of a test photoconductor device. The spectral responses at 300 K and 77 K show that this material allows detection in the best region of transparency of the atmospheric window, around . The large increase of the response with decreasing temperature is attributed to the variation of the recombination time. Noise measurements between Hz and Hz indicate the presence of two types of fluctuations: the low-frequency one is inversely proportional to the frequency f and is partly due to non-optimized contacts; the higher-frequency one is due to a generation - recombination process. At , an estimated limit to detection of is deduced at 80 K in the ideal case of pure thermal noise.
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