Abstract
Vapor phase grown ZnO samples treated with hydrogen and∕or deuterium plasma were studied by means of photoconductivity and infrared (IR) absorption spectroscopy. Three bands at 180, 240, and $310\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$ were observed in the photoconductivity spectra of hydrogenated ZnO. These are identified as electronic transitions of three independent hydrogen-related shallow donors. Two electronic transitions from the $\mathrm{H}\text{\penalty1000-\hskip0pt}\mathrm{I}$ defect previously associated with the bond-centered hydrogen [E. V. Lavrov et al., Phys. Rev. B 66, 165205 (2002)] were found in IR absorption spectra at 1430 and $1480\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$. Based on the energies of these transitions $\mathrm{H}\text{\penalty1000-\hskip0pt}\mathrm{I}$ was ruled out as a candidate for the hydrogen-related shallow donor in ZnO.
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