Abstract
Photocapacitance (PHCAP) measurements have been performed for intentionally undoped n-type Ga0.9Al0.1As grown by liquid-phase epitaxy (LPE) with arsenic vapor pressure controlled in the range from 0.016 to 51 Torr. Eν+0.47 eV and Eν+0.7–0.8 eV deep levels are found to be dominant. The density of the Eν+0.47 eV deep levels increases with increasing arsenic vapor pressure in proportion to P As1/2. The Eν+0.47 eV deep levels are considered to be associated with arsenic interstitial atoms.
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