Abstract
We discuss an open photoacoustic cell study on sulfer-doped n-type InP wafer. The thermal diffusivity of the sample is evaluated from the phase data associated with the photoacoustic signal as a function of the modulation frequency under heat transmission configuration. Analy- sis is made on the basis of the Rosencwaig-Gersho theory and the re- sults are compared with those from earlier reported photoacoustic stud- ies of semiconductors. Our investigation clearly indicates that the instantaneous thermalization process is the major heat diffusion mecha- nism responsible for the photoacoustic signal generation in an InP sample. © 2002 Society of Photo-Optical Instrumentation Engineers.
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