Abstract
CuGa x In 1 −x Se 2 thin films have been produced using spray-pyrolysis. The layers were deposited onto Mo-coated soda-lime glass at a substrate temperature of 623 K, and the gallium content of the layers varied. The layers were investigated using photoacoustic spectroscopy. The normalised photoacoustic spectra of CuGa x In 1− x Se 2 films with x=0, 0.2, 0.4 and 0.5 showed a sudden fall in the photoacoustic signal at photon energies of 0.99, 1.15, 1.27 and 1.36 eV , respectively, which correspond to the respective direct energy band gaps of these films. The photoacoustic spectra also showed peaks at 0.75, 0.78, 0.82, 0.86 and 0.88 eV, respectively, in the sub-band gap region, which have been attributed to the defect states within these films.
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