Abstract
Macroscopic and microscopic changes in sputtered GeO2 films induced by band-gap light from an ArF excimer laser have been studied. When irradiated at 1atm, the film thickness increases, surface-roughness increases, refractive-index decreases, hygroscopic enhancements, and Ge–O–Ge distance increases. Irradiations in vacuum make these changes smaller or undetectable. These photo-induced changes are discussed from phenomenological and structural viewpoints, and compared with characteristics in GeO2–SiO2 and GeS2 films.
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