Abstract
The temperature evolution of strain in GaAs layers grown on Si (0 0 1) and Si (1 1 1) substrates has been investigated by Raman scattering. The Raman results show that for temperatures lower than a certain temperature (≅280 K for the (0 0 1) and ≅400 K for (1 1 1) growth directions) the phonon modes for the epilayers shift toward lower frequencies in comparison to bulk material. This is due to the “thermal” strain arising from the difference in thermal expansion coefficients between GaAs epilayer and Si. A reverse phenomenon occurs at higher temperatures indicating the presence of compressive strain due to the mismatch in lattice constants between the GaAs epilayers and the Si substrate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
