Abstract
Multiple pulse annealing with a XeCl laser (308 nm, 10nsec, ~0.8J/cm2) has been used to produce flat concentration profiles following heavy implantations of Ga, B, P, and As at energies up to 350 keV. The influence of the free carrier concentration on the zone center phonon frequency has been studied by Raman scattering with violet and ultra-violet cw laser lines to ensure that only the implanted region was sampled. We find a softening of the zone center optic mode in Si : As (Ne ≈ 3 x 1021 cm-3) of ~10 cm-1 and for Si : B (Np ≈ 1 x 1021 cm-3) a softening of ~20 cm-1.
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