Abstract
We study the phonon properties of compressively strained In x Ga 1-x As 1-y N y (x < 0.13, y < 0.03) single layers for wavenumbers from 100 to 600 cm -1 using far infrared spectroscopic ellipsometry. The intentionally undoped InGaAsN layers were grown pseudomorphically on top of undoped GaAs buffer layers deposited on Te-doped (001) GaAs substrates by metal-organic vapor phase epitaxy. The InGaAsN layers show a two-mode phonon behaviour in the spectral range from 100 to 600 cm -1 . We detect the transverse GaAs and GaN sublattice phonon modes at wavenumbers of about 267 and 470 cm -1 , respectively. The polar strength f of the GaN sublattice resonance changes with nitrogen composition y and with the biaxial strain e xx resulting from the lattice mismatch between InGaAsN and GaAs. This effect can be used to derive the nitrogen and indium content of the InGaAsN layers combining the observed f-dependence with results from high-resolution double-crystal X-ay diffractometry.
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