Abstract
Midinfrared spectroscopic ellipsometry reveals the two-phonon mode behavior of GaNyP1−y for nitrogen compositions 0.006⩽y⩽0.0285. The single layers (∼350 nm) studied were grown by metalorganic vapor-phase epitaxy on GaP substrates with orientations (001), and (001) with 5° off toward [110]. Line-shape analysis of the midinfrared response allows determination of the transverse- and longitudinal-optical phonon frequencies of the GaP- and GaN-like phonon modes. The polar strength of the GaN lattice resonance increases linearly with y, which can be used to monitor the nitrogen content of GaNyP1−y.
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