Phonon conductivity of doped germanium under uniaxial stress in the

Abstract

The relaxation-rate expressions for elastic, inelastic, and absorption phonon-electron processes in n-type germanium have been derived under [110] directional uniaxial tension. Using these expressions, the phonon conductivity of Sb-doped Ge under tension is evaluated and compared with the experimental results given by Keyes and Sladek. It is found that a slight increase of Bohr radii of the upper two levels of the donor ground states and decrease of shear deformation potential ${\mathit{E}}_{\mathit{u}}$ with stress can give better agreement with the experimental results. This work suggests that the theory of electron-phonon interaction is not a failure, as suspected by earlier workers.