Abstract
Uniaxial stress dependence of acoustical phonon absorption in intermediately doped Ge:Sb has been studied using heat pulse technique. Abruptly decreasing LA and FTA phonon scattering in stress interval of 3−7 · 108dyn/cm2with further saturation up to 1.9 · 109dyn/cm2was observed. Results obtained from phonon measurements correlate with conductivity activation energy behavior on stress. Acoustical transparency stress dependence is assumed to be connected with phonon assisted electron transitions from impurity ground state D 0 to D−band.
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