Abstract
(Cs1−xRbx)2ZnI4 crystals were grown by two different methods with Rb concentrations varying from x=0 to 2.5%. 127I NQR and calorimetric measurements showed that crystals grown by the Bridgman technique contain residual impurities (∼0.5%) for all x. While x=0 crystals grown from solution do not contain detectable impurities, they allow incorporation only of a low Rb concentration, not above 0.5%. A transition-temperature-concentration (x) phase diagram has been constructed for Bridgman-grown crystals from NQR data. Rb doping shifts the normal-incommensurate and incommensurate-ferroelastic phase-transition points toward higher temperatures with different rates. The P21/m↔P1 first-order transition shifts toward lower temperatures. The region of low Rb concentrations lies closest to the critical point.
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