Abstract
Selective area irradiation was used to create irradiated/unmodified/irradiated CDW heterostructures with well-defined interfaces on a single Nbse 3 crystal. The temperature dependence of the extra voltage required for carrier conversion (phase slip voltage, V Ps 0 is extracted from length dependent studies. We find that the temperature dependence of V Ps 0 for the 143 K and 59 K CDW transitions are identical if properly scaled by the transition temperature. The V ps 0 temperature dependence is not thermally activated, but contains an upper and lower temperature branch. The crossover temperature for the two branches is 0.75Tp. For the 59 K CDW we observe a zero-bias resistance anomaly near a single irradiated/unmodified interface. This anomaly abruptly changes with temperature near 44 K suggesting a qualitative change in the phase slip mechanism near 0.75Tp.
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