Abstract
Ga0.81In0.19As0.14Sb0.86 layers were grown on (100)-Te doped GaSb substrates 2º missoriented towards (110), (111)A and (111)B directions by metalorganic vapour deposition (MOVPE) at 540 °C. X-ray reciprocal space maps done in symmetric (224) and asymmetric (115) directions show a super-lattice structure due to the phase separation with a 5 nm period and independent of substrate orientation. The x-ray maps show different stage of relaxation of the films and in same cases an interdiffusion region near the substrate. Despite of the phase separation, channelling experiments with H ions as projectiles showed a good quality of the films. Channelling experiments show that the crystalline quality gets worse with increasing the In and As concentration.
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