Phase controlled synthesis and cathodoluminescence properties of ZnS nanobelts synthesized by PVD

Abstract

Zinc sulfide (ZnS) nanobelts were synthesized via physical vapor deposition to explore the electronic properties of optoelectronic nano-devices. It was determined that the mass ratio of wurtzite (WZ) phase to zincblende (ZB) phase and the preferential orientation (100) are related to the carrier-gas flow rate. The high concentration of planar defects within the phase boundary enhances phase transition. Cathodoluminescence measurements show a red shift of the 337 nm band-gap emission due to stacking and twin faults. We find a direct correlation between the magnitude of the red shift and the mass ratio of ZB phase. With an increase in the ZB phase, there is an increase in the concentration of stacking and twin faults introduced by the phase transformation, as indicated by an increasing red shift in the data. The absorption peaks at 666 and 719 nm were found by UV–vis absorption spectrum, which is attributed to surface defects. This work would help to better understand the important roles of planar defects in the phase transition and also provide us with a feasible route to control phase ratio and cathodoluminescence properties of ZnS nanobelts and other II-VI semiconductor nanostructures.