Abstract
The phase composition of the microdefects in Te-doped GaAs single crystals grown by the Czochralski technique with a free carrier density n 0 =5×10 17 –5×10 18 cm −3 was investigated. Ga 2 Te 3 phase reflections appeared in the X-ray diffraction patterns. Nonmonotonic dependences of the relative volume fraction and the coherent scattering domain size of Ga 2 Te 3 on Te doping level were obtained. The possible causes of the nonmonotonic variation in the structural parameters of the Ga 2 Te 3 phase with increase of Te concentration in GaAs are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
