Abstract
The phases formed in iron nitride thin films grown on Si wafers by magnetron sputtering with pulsed power supply were investigated. X-ray diffraction and conversion electron Mössbauer spectroscopy showed that in addition to the expected temperature dependence, there was an influence of film thickness on phase composition. All films of several thickness deposited at room temperature were composed of a mixture of mononitrides, namely γ″-FeN, γ‴-FeN, and a third phase compatible with a hexagonal wurtzite-type FeN. Thin films (20 nm) deposited at higher temperatures showed increasing amounts of ε-Fe2.1N, becoming single phase above 400 °C, and staying single ε-phase up to 500 °C. Thicker films (200 nm) showed the presence of ε-Fe2.1N already at 100 °C, became single-phase ε-Fe2.1N at 300 °C, and single phase γ′-Fe4N at 500 °C.
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