Abstract
The phosphors ZnGa2O4 were synthesized via high temperature solid-state reaction. The crystal structure, photoluminescence, persistent luminescence, and photocatalytic properties of ZnGa2O4 were studied in detail. The x-ray diffraction patterns showed that some remaining phases of ZnO and β-Ga2O3 appeared with the excess amount of ZnO and Ga2O3, respectively. The results of the Raman spectra indicated that the first order Raman active modes of ZnGa2O4 were attributed to O2− ions and Zn2+ ions in tetrahedral sites. The phosphors exhibited a broad-band emission around 430 nm, which could be ascribed to the Ga–O transition of regular octahedral sites in the spinel lattice of ZnGa2O4. It also exhibited the emission peak around 430 nm shift to longer wavelength with the amount of the excess ZnO. The persistent luminescence of ZnGa2O4 could be observed for 10 min by naked eyes at room temperature under 254 nm ultraviolet (UV) excitation. In addition, photocatalytic activity test showed that ZnGa2O4 exhibited excellent photocatalytic activity for the degradation of Rhodamine B by the UV irradiation. It was indicated that the traps played an important role in trapping the electrons or holes to decrease the combination of the holes or electrons producing by the irradiation.
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