Perpendicular magnetic anisotropy of Pd/Co2MnSi/MgAl2O4/Pd structure films

Abstract

The existence of strong perpendicular magnetic anisotropy (PMA) with a Keff value of 0.579 × 106 erg cm−3 was observed in Pd(6 nm)/Co2MnSi(5 nm)/MgAl2O4(1 nm) trilayers which were prepared at a substrate temperature of 350 °C. It was found that introducing proper oxygen (Ar:O2 = 18:2) in the oxide preparation process is crucial for the acquisition of PMA. In addition, PMA is also found to be strongly sensitive to the thickness of the Co2MnSi (CMS) and MgAl2O4 (MAO) layers. The PMA can be regulated in a wider range of tCMS (4–5.7 nm), and the maximum tCMS of PMA can be maintained at 5.7 nm. For tCMS = 5 nm, the structure can maintain PMA under the condition of tMAO of 0.9–1.3 nm.