Abstract
We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO2. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.
Highlights
Photon enhanced thermionic energy (PETE) converters, which were designed for electric power generation that directly convert solar energy into electric energy through semiconducting cathode and anode separated by a narrow vacuum gap, open a wealth of possibilities to get a high efficiency energy system.[1]
A layer of molybdenum disc array was formed between the amorphous silicon (a-Si):H layer and the quartz substrate to enhance light absorption in the silicon layer
The molybdenum disc array (MDA) with a diameter of 1 μm, period of 1.2 μm and a thickness of 50 nm on quartz substrate was fabricated using a cost efficient method based on the nano-imprint technology
Summary
Periodic molybdenum disc array for light trapping in amorphous silicon layer Jiwei Wang,[1,2] Kang Yang,[2] Haiyan Chen,2,a Changkai Deng,[1,2] Dongdong Li,[2] Xiaoyuan Chen,[2] and Wei Ren1,b 1International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China 2Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (Received 16 February 2016; accepted 26 April 2016; published online 23 May 2016).
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