Abstract
The interface of Cu/epoxy molding compound composite (Cu/EMC) faces threats from water and ionic compounds, which can induce the delamination of the Cu/EMC, and thus, affect the reliability of the most widely used composite in the semiconductor industry. Herein, we proposed a thin SiON interfacial layer converted from an inorganic polymer of perhydropolysilazane (PHPS), which not only improved the bonding strength of the Cu/EMC by up to 57% but also increased the durability of Cu/EMC in water and saturated NaCl solution. This thin interfacial layer has a negligible influence on the thermal conductive behavior of Cu/EMC, which is a vital parameter in microelectronic encapsulation. The interfacial bonding mechanism has been investigated, which verified a covalent bonding between Cu and SiON, as well as a synergistic effect of hydrogen bonding and mechanical interlocking between the EMC and SiON. This work thus presents a promising strategy to construct thin SiON interfacial layers to improve the bonding strength and increase the durability for Cu/EMC composites.
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