Abstract
Performance variability of TaOx-based memristor and HfO 2 -based resistive-random-access-memory (RRAM) device were investigated. Around the quantum conductance, a significant resistance switching instability and noise enhancement are observed in both tantalum oxide memristors and hafnium oxide RRAM devices. Next, we propose and experimentally validate a quantum point contact model coupled with a first principles calculation, which can account for the resistance switching mechanisms well and shows the evolutions of the conducting filaments during resistance switching processes.
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