Abstract
The performance of a Raith 150 electron-beam lithography system is reported. The system’s resolution, stability, intrafield distortion, stitching, and overlay performance are evaluated. Patterning at low- and high-acceleration voltages is compared. The system was used to pattern sub-20 nm features, and the largest intrafield distortion for a 100 μm field was measured to be 15 nm. Pattern-placement accuracy below 35 nm, mean plus twice the standard deviation, was demonstrated.
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