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https://doi.org/10.1088/0256-307x/26/3/037305
Copy DOIJournal: Chinese Physics Letters | Publication Date: Feb 23, 2009 |
Citations: 1 |
We fabricate pentacene-based organic field effect transistors (OFETs) with Cu as source and drain (S-D) electrodes. The fabricated devices stored for ten hours under ambient atmospheric conditions exhibit superior performance compared with the as-prepared devices. The field-effect mobility increases from 0.012 to 0.03 cm2 V−1 s−1, and the threshold voltage downshifts from –14 to –9 V. The on/off current ratios are close to the order of 104. The improved performance of the stored devices is attributed to the formation of thin Cu oxide at the Cu electrodes/organic interfaces. These results suggest a simple and available way to optimize device properties and to reduce fabrication cost for OFETs.
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