Abstract
Deposition of polycrystalline Lead sulfide nanothin films onto Si and glass substrates at temperatures (200-300 °C) was carried out by chemical spraying route using optimized preparative conditions. The XRD pattern confirmed the formation of PbS semiconducting films with orthorhombic structure. The electrical and optical properties of the nanocrystalline thin films were studied aiming to better understanding for the electrical and opto-electrical properties of a hetrojunction with p-type Si. It was found that, the average grain size of PbS in the films was between 4 nm and 7 nm. The band gap was also calculated from the absorption co-efficient curves and showed a blue shift due to the grain size of the nanoPbS in the films. The current-voltage (I-V) and photoresponse characteristics were obtained with different illumination intensities. The detector exhibits an evident wide-range spectral responsivity
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